Nickel <111> Film (100nm) + 300 nm SiO2 coated Silicon Wafer -4" dia .(100) P/Boron ,SSP, R:1-20 ohm.cm

Nickel Metallic Film 

• Nickel Thickness: 100nm
• Film Crystallinity:   (111) - oriented polycrystals
• Roughness, RMS:  N/A
  

Silicon Wafer Specifications:

• Conductive type:        Si   P- type, B-doped
  
• Resistivity:                  1-20  ohm-cm
• Size:                          4" diameter +/- 0.5 mm  x 0.525 +/- 0.025 mm th
• Orientation:                (100) +/- 0.5^o
• Polish:                        One  sides  polished
• Surface roughness:     Prime
• Packing:                      Vacuum packed on a 4" single wafer carrier
  
• Optional:  you may need tool below to handle the wafer ( click picture to order )

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