Nickel<111> Film (100nm) Coated SiO2/Si Wafer -(100) P/Boron ,10x10x0.5mmSSP, R:1-20 ohm.cm - Ni-SO/Si-101005S1

Nickel Film

•          Nickel Film Thickness: 100nm
• Film Crystallinity:   (111) - oriented polycrystals

Silicon Wafer Specifications:

• Conductive type:          Si   P- type, B-doped
  
• Resistivity:                  1-20  ohm-cm
• Size:                          10x10x0.5mm
• SiO2 Thichness:          300 nm
  
• Orientation:                 (100) +/- 0.5^o
• Polish:                        One  sides  polished
• Surface roughness:      Prime
• Packing:                      Vacuum packed on a 4" single wafer carrier
  
• Optional:  you may need tool below to handle the wafer ( click picture to order )

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