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MgAl2O4 (110) 10x10x0.5mm, 1 side polished - MAe101005S1
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MgAl2O4 (110) 10x10x0.5mm, 1 side polished - MAe101005S1

MgAl2O4 (110) 10x10x0.5mm, 1 side polished - MAe101005S1

  • MgAl2O4 single crystal substrate
  • Size: 10mm x 10mm x 0.5mm +/-0.05mm
  • Orientation: (110) +/-0.5o
  • Polished: One side 
  • Surface roughness: < 5 A
  • Packing: 1000 class clean room with 100 class plastic bag

MgAl2O4 ( spinel ) single crystals are widely used for bulk acoustic wave and microwave devices and fast IC epitaxial substrates. It is also found that MgAl2O4 is a good substrate for III-V nitrides device. MgAl2O4 crystal is very difficult to grow, due to the difficulty in maintaining a single phase structure. Following several year of effort, MTI is proud of being able to supply the best quality MgAl2O4 crystal in the world. 

Typical Physical Properties

Crystal Structure

Cubic: a = 8.083Å

Growth Method

Czochralski

Density

3.64 g/cm3

Melt Point

2130 oC

Hardness

8.0 ( Mohns)

Thermal expansion

 7.45 (x10-6/ oC)

 Phase Velocity

6500 m/s at (100> shear wave

Propagation loss

6.5 dB/ms

Typical growth direction

<100> and <110>

Downloadable Resources


Related Products:

ZnO SiC GaN MgAl2O4 (spinel) LiGaO2
Other Al2O3 AlN template Wafer Carriers Plasma Cleaners Film Coater
$38.15

Original: $109.00

-65%
MgAl2O4 (110) 10x10x0.5mm, 1 side polished - MAe101005S1—

$109.00

$38.15

MgAl2O4 (110) 10x10x0.5mm, 1 side polished - MAe101005S1

  • MgAl2O4 single crystal substrate
  • Size: 10mm x 10mm x 0.5mm +/-0.05mm
  • Orientation: (110) +/-0.5o
  • Polished: One side 
  • Surface roughness: < 5 A
  • Packing: 1000 class clean room with 100 class plastic bag

MgAl2O4 ( spinel ) single crystals are widely used for bulk acoustic wave and microwave devices and fast IC epitaxial substrates. It is also found that MgAl2O4 is a good substrate for III-V nitrides device. MgAl2O4 crystal is very difficult to grow, due to the difficulty in maintaining a single phase structure. Following several year of effort, MTI is proud of being able to supply the best quality MgAl2O4 crystal in the world. 

Typical Physical Properties

Crystal Structure

Cubic: a = 8.083Å

Growth Method

Czochralski

Density

3.64 g/cm3

Melt Point

2130 oC

Hardness

8.0 ( Mohns)

Thermal expansion

 7.45 (x10-6/ oC)

 Phase Velocity

6500 m/s at (100> shear wave

Propagation loss

6.5 dB/ms

Typical growth direction

<100> and <110>

Downloadable Resources


Related Products:

ZnO SiC GaN MgAl2O4 (spinel) LiGaO2
Other Al2O3 AlN template Wafer Carriers Plasma Cleaners Film Coater

Product Information

Shipping & Returns

Description

  • MgAl2O4 single crystal substrate
  • Size: 10mm x 10mm x 0.5mm +/-0.05mm
  • Orientation: (110) +/-0.5o
  • Polished: One side 
  • Surface roughness: < 5 A
  • Packing: 1000 class clean room with 100 class plastic bag

MgAl2O4 ( spinel ) single crystals are widely used for bulk acoustic wave and microwave devices and fast IC epitaxial substrates. It is also found that MgAl2O4 is a good substrate for III-V nitrides device. MgAl2O4 crystal is very difficult to grow, due to the difficulty in maintaining a single phase structure. Following several year of effort, MTI is proud of being able to supply the best quality MgAl2O4 crystal in the world. 

Typical Physical Properties

Crystal Structure

Cubic: a = 8.083Å

Growth Method

Czochralski

Density

3.64 g/cm3

Melt Point

2130 oC

Hardness

8.0 ( Mohns)

Thermal expansion

 7.45 (x10-6/ oC)

 Phase Velocity

6500 m/s at (100> shear wave

Propagation loss

6.5 dB/ms

Typical growth direction

<100> and <110>

Downloadable Resources


Related Products:

ZnO SiC GaN MgAl2O4 (spinel) LiGaO2
Other Al2O3 AlN template Wafer Carriers Plasma Cleaners Film Coater
MgAl2O4 (110) 10x10x0.5mm, 1 side polished - MAe101005S1 | MTI Online Store