LSAT (100) 10x10 x0.5 mm Square Substrate --- 1SP - LSATa101005S1
LSAT (LaAlO3)0.3 (Sr2AlTaO6)0.7 is a newly developing crystal with perovskite structure and twin-free. LSAT has excellent lattice match with high Tc superconductors and many oxide materials. LSAT has lower melting point and can be grown by CZ technology at lower cost, therefore, it is expected to replace LaAlO3 and SrTiO3 as a common single crystal substrate for epitaxial oxide thin films for gain magnetic ferro-electronic and superconductive devices
Click here to view SDS
Substrate Specifications:
- Size: 10 x 10 x 0.5 mm +/-0.05 mm
- Orientation: <100> +/-0.5 Deg
- Surface Roughness: CMP polished with min. sub-surface damage, and Ra < 10 A
- Package: Packing in 1000 class clean room with 100-grade clean plastic bag
|
Typical Physical Properties |
Chemical Formula |
( LaAlO3)0.3 (Sr2AlTaO6)0.7 or ( La0.18Sr0.82)(Al0.59Ta0.41)O3 |
Crystal Structure |
Cubic: a = 3.868 A |
Growth Method |
Czochralski |
Density |
6.74 g/cm3 |
Melt Point |
1840 oC |
Thermal expansion |
10 (x10-6/ oC) |
Dielectric Constant |
~ 22 |
Color and Appearance |
|
Related Products
| Other LSAT | LaAlO3 | MgO | Wafer Box |
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| NdCaAlO4 | NdGaO3 | SrTiO3 | Film Coater |
 |
 |
|
|
| SrLaAlO4 | SrLaGaO4 | YSZ | Plasma Cleaner |
 |
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Original: $115.00
-65%$115.00
$40.25LSAT (100) 10x10 x0.5 mm Square Substrate --- 1SP - LSATa101005S1
LSAT (LaAlO3)0.3 (Sr2AlTaO6)0.7 is a newly developing crystal with perovskite structure and twin-free. LSAT has excellent lattice match with high Tc superconductors and many oxide materials. LSAT has lower melting point and can be grown by CZ technology at lower cost, therefore, it is expected to replace LaAlO3 and SrTiO3 as a common single crystal substrate for epitaxial oxide thin films for gain magnetic ferro-electronic and superconductive devices
Click here to view SDS
Substrate Specifications:
- Size: 10 x 10 x 0.5 mm +/-0.05 mm
- Orientation: <100> +/-0.5 Deg
- Surface Roughness: CMP polished with min. sub-surface damage, and Ra < 10 A
- Package: Packing in 1000 class clean room with 100-grade clean plastic bag
|
Typical Physical Properties |
Chemical Formula |
( LaAlO3)0.3 (Sr2AlTaO6)0.7 or ( La0.18Sr0.82)(Al0.59Ta0.41)O3 |
Crystal Structure |
Cubic: a = 3.868 A |
Growth Method |
Czochralski |
Density |
6.74 g/cm3 |
Melt Point |
1840 oC |
Thermal expansion |
10 (x10-6/ oC) |
Dielectric Constant |
~ 22 |
Color and Appearance |
|
Related Products
| Other LSAT | LaAlO3 | MgO | Wafer Box |
| |
|
|
|
| NdCaAlO4 | NdGaO3 | SrTiO3 | Film Coater |
| |
|
|
|
| SrLaAlO4 | SrLaGaO4 | YSZ | Plasma Cleaner |
| |
|
|
|
Product Information
Product Information
Shipping & Returns
Shipping & Returns
Description
LSAT (LaAlO3)0.3 (Sr2AlTaO6)0.7 is a newly developing crystal with perovskite structure and twin-free. LSAT has excellent lattice match with high Tc superconductors and many oxide materials. LSAT has lower melting point and can be grown by CZ technology at lower cost, therefore, it is expected to replace LaAlO3 and SrTiO3 as a common single crystal substrate for epitaxial oxide thin films for gain magnetic ferro-electronic and superconductive devices
Click here to view SDS
Substrate Specifications:
- Size: 10 x 10 x 0.5 mm +/-0.05 mm
- Orientation: <100> +/-0.5 Deg
- Surface Roughness: CMP polished with min. sub-surface damage, and Ra < 10 A
- Package: Packing in 1000 class clean room with 100-grade clean plastic bag
|
Typical Physical Properties |
Chemical Formula |
( LaAlO3)0.3 (Sr2AlTaO6)0.7 or ( La0.18Sr0.82)(Al0.59Ta0.41)O3 |
Crystal Structure |
Cubic: a = 3.868 A |
Growth Method |
Czochralski |
Density |
6.74 g/cm3 |
Melt Point |
1840 oC |
Thermal expansion |
10 (x10-6/ oC) |
Dielectric Constant |
~ 22 |
Color and Appearance |
|
Related Products
| Other LSAT | LaAlO3 | MgO | Wafer Box |
| |
|
|
|
| NdCaAlO4 | NdGaO3 | SrTiO3 | Film Coater |
| |
|
|
|
| SrLaAlO4 | SrLaGaO4 | YSZ | Plasma Cleaner |
| |
|
|
|
