GaSb Wafer (111)-B, undoped, P-type 2"x0.5 mm ,2sp
Wafer Specifications:.
-
Size: 2" diameter x 0.5 mm,
-
Orientation: (111)-B
- Flats: SEMI PF <01-1>. SF<0-11>
-
Dopping: undoped,
-
Conducting type: P-type.
-
Polish: Two side EPI -ready polished
- Resistivity: N/A
- Mobility: 600-700cm^2/Vs
- Carrier concentration: (1-3)x10^17 ohm.cm
- EPD : <2000 cm^-2
- Packing: 1000 class clean room in a single wafer container
- Surface finish (RMS or Ra) : < 5A
|
Dopant |
Type |
Carrier Concentration ( cm-3) |
Mobility ( cm2/V.Sec) |
Resistivity ( ohm-cm ) |
EPD (cm-2) |
|
Undoped |
P |
1.0~2.0 x 1017 |
600 ~ 800 |
~0.1 |
<10000 |
|
Zn |
P+ |
2.0~5.0 x 1018 |
300 ~ 500 |
~0.004 |
<10000 |
|
Te |
N |
2.0~6.0 x 1017 |
2500 ~ 3500 |
~0.05 |
<10000 |
|
High Resistivity |
P or N |
1.0~2.0 x 1016 |
460 |
~ 1.0 |
<10000 |
Related
Other GaSb
|
InAs |
InP
|
GaAs |
InSb
|
Wafer Box
|
Film Coater
|
RTP Furnaces
|
Original: $1,295.00
-65%$1,295.00
$453.25GaSb Wafer (111)-B, undoped, P-type 2"x0.5 mm ,2sp
Wafer Specifications:.
-
Size: 2" diameter x 0.5 mm,
-
Orientation: (111)-B
- Flats: SEMI PF <01-1>. SF<0-11>
-
Dopping: undoped,
-
Conducting type: P-type.
-
Polish: Two side EPI -ready polished
- Resistivity: N/A
- Mobility: 600-700cm^2/Vs
- Carrier concentration: (1-3)x10^17 ohm.cm
- EPD : <2000 cm^-2
- Packing: 1000 class clean room in a single wafer container
- Surface finish (RMS or Ra) : < 5A
|
Dopant |
Type |
Carrier Concentration ( cm-3) |
Mobility ( cm2/V.Sec) |
Resistivity ( ohm-cm ) |
EPD (cm-2) |
|
Undoped |
P |
1.0~2.0 x 1017 |
600 ~ 800 |
~0.1 |
<10000 |
|
Zn |
P+ |
2.0~5.0 x 1018 |
300 ~ 500 |
~0.004 |
<10000 |
|
Te |
N |
2.0~6.0 x 1017 |
2500 ~ 3500 |
~0.05 |
<10000 |
|
High Resistivity |
P or N |
1.0~2.0 x 1016 |
460 |
~ 1.0 |
<10000 |
Related
| Other GaSb
|
InAs |
InP
|
GaAs |
InSb
|
Wafer Box
|
Film Coater
|
RTP Furnaces
|
Product Information
Product Information
Shipping & Returns
Shipping & Returns
Description
Wafer Specifications:.
-
Size: 2" diameter x 0.5 mm,
-
Orientation: (111)-B
- Flats: SEMI PF <01-1>. SF<0-11>
-
Dopping: undoped,
-
Conducting type: P-type.
-
Polish: Two side EPI -ready polished
- Resistivity: N/A
- Mobility: 600-700cm^2/Vs
- Carrier concentration: (1-3)x10^17 ohm.cm
- EPD : <2000 cm^-2
- Packing: 1000 class clean room in a single wafer container
- Surface finish (RMS or Ra) : < 5A
|
Dopant |
Type |
Carrier Concentration ( cm-3) |
Mobility ( cm2/V.Sec) |
Resistivity ( ohm-cm ) |
EPD (cm-2) |
|
Undoped |
P |
1.0~2.0 x 1017 |
600 ~ 800 |
~0.1 |
<10000 |
|
Zn |
P+ |
2.0~5.0 x 1018 |
300 ~ 500 |
~0.004 |
<10000 |
|
Te |
N |
2.0~6.0 x 1017 |
2500 ~ 3500 |
~0.05 |
<10000 |
|
High Resistivity |
P or N |
1.0~2.0 x 1016 |
460 |
~ 1.0 |
<10000 |
Related
| Other GaSb
|
InAs |
InP
|
GaAs |
InSb
|
Wafer Box
|
Film Coater
|
RTP Furnaces
|
