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GaSb Wafer (100), undoped, 5x5x0.5 mm, 1sp
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GaSb Wafer (100), undoped, 5x5x0.5 mm, 1sp

GaSb Wafer (100), undoped, 5x5x0.5 mm, 1sp

Wafer Specifications:. 

  • Size:                      5x5 x 0.5mm,
  • Orientation:          (100)
  • Dopping:              undoped,
  • Conducting type: P-type.
  • Polish:                   one side polished by CMP
  • Packing:               1000 class clean room in a single wafer container           

   Typical Properties

  • Crystal Structure:                                cubic a = 6.095 Å
  • Density:                                                 5.619 g/cm3
  • Melting point:                                        710 oC
  • Grown by a special LEC technique , EPD :<10^4/cm2. 
  • Carrier concentration:                   ( 1-2)x10^17 cm^-3
  • Mobility:                                         600-700 cm^2/Vs
  • EPD                                               <3000 cm^-2
  • Thermal Expansion:                           6.1 x 10 -6 /oK
  • Thermal conductivity:                          270 mW / cm.k   at 300K

Dopant

Type

Carrier Concentration

( cm-3)

Mobility

( cm2/V.Sec)

Resistivity

( ohm-cm )

EPD

(cm-2)

Undoped

P

1.0~2.0 x 1017

600 ~ 800

~0.1

<10000

Zn

P+

2.0~5.0 x 1018

300 ~ 500

~0.004

<10000

Te

N

2.0~6.0 x 1017

2500 ~ 3500

~0.05

<10000

High Resistivity

P or N

1.0~2.0 x 1016

460

~ 1.0

<10000















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$34.65

Original: $99.00

-65%
GaSb Wafer (100), undoped, 5x5x0.5 mm, 1sp—

$99.00

$34.65

GaSb Wafer (100), undoped, 5x5x0.5 mm, 1sp

Wafer Specifications:. 

  • Size:                      5x5 x 0.5mm,
  • Orientation:          (100)
  • Dopping:              undoped,
  • Conducting type: P-type.
  • Polish:                   one side polished by CMP
  • Packing:               1000 class clean room in a single wafer container           

   Typical Properties

  • Crystal Structure:                                cubic a = 6.095 Å
  • Density:                                                 5.619 g/cm3
  • Melting point:                                        710 oC
  • Grown by a special LEC technique , EPD :<10^4/cm2. 
  • Carrier concentration:                   ( 1-2)x10^17 cm^-3
  • Mobility:                                         600-700 cm^2/Vs
  • EPD                                               <3000 cm^-2
  • Thermal Expansion:                           6.1 x 10 -6 /oK
  • Thermal conductivity:                          270 mW / cm.k   at 300K

Dopant

Type

Carrier Concentration

( cm-3)

Mobility

( cm2/V.Sec)

Resistivity

( ohm-cm )

EPD

(cm-2)

Undoped

P

1.0~2.0 x 1017

600 ~ 800

~0.1

<10000

Zn

P+

2.0~5.0 x 1018

300 ~ 500

~0.004

<10000

Te

N

2.0~6.0 x 1017

2500 ~ 3500

~0.05

<10000

High Resistivity

P or N

1.0~2.0 x 1016

460

~ 1.0

<10000















Related Product

Other GaSb

 InAs

 InP 

 GaAs


 InSb

 Wafer Box

 Film Coater

 RTP Furnaces

 

Product Information

Shipping & Returns

Description

Wafer Specifications:. 

  • Size:                      5x5 x 0.5mm,
  • Orientation:          (100)
  • Dopping:              undoped,
  • Conducting type: P-type.
  • Polish:                   one side polished by CMP
  • Packing:               1000 class clean room in a single wafer container           

   Typical Properties

  • Crystal Structure:                                cubic a = 6.095 Å
  • Density:                                                 5.619 g/cm3
  • Melting point:                                        710 oC
  • Grown by a special LEC technique , EPD :<10^4/cm2. 
  • Carrier concentration:                   ( 1-2)x10^17 cm^-3
  • Mobility:                                         600-700 cm^2/Vs
  • EPD                                               <3000 cm^-2
  • Thermal Expansion:                           6.1 x 10 -6 /oK
  • Thermal conductivity:                          270 mW / cm.k   at 300K

Dopant

Type

Carrier Concentration

( cm-3)

Mobility

( cm2/V.Sec)

Resistivity

( ohm-cm )

EPD

(cm-2)

Undoped

P

1.0~2.0 x 1017

600 ~ 800

~0.1

<10000

Zn

P+

2.0~5.0 x 1018

300 ~ 500

~0.004

<10000

Te

N

2.0~6.0 x 1017

2500 ~ 3500

~0.05

<10000

High Resistivity

P or N

1.0~2.0 x 1016

460

~ 1.0

<10000















Related Product

Other GaSb

 InAs

 InP 

 GaAs


 InSb

 Wafer Box

 Film Coater

 RTP Furnaces

 

GaSb Wafer (100), undoped, 5x5x0.5 mm, 1sp | MTI Online Store