GaN Template on Sapphire(0001) 10 x 10 mm x 0.43mm,1sp .GaN Film:4- 5um

GaN Template on saphhire is made by a hydride vapor phase epitaxy (HVPE)-based method. During the HVPE process, HCl reacts with molten Ga to form GaCl, which in turn reacts with NH3 to form GaN. GaN template is a cost effective way to replace GaN single crystal substrate

Specifications

• Sizes 10mmx10mm
• Substrate Sapphire, Orientation C (0001) +/- 1.0 ^o
• Conduction Type: n-type,
• Resistivity < 0.5 Ohm-cm
• Front Surface Finish (Ga Face) As-grown
• Back Surface Finish Sapphire as-received finish
• Useable Surface Area >90% 
• Edge Exclusion Area 1mm
• Package Single Wafer Container
• GaN layer thickness 4- 5 microns , (=/- 10%) with roughness: ~10 nm RMS as measured by the Wyko (white light interferometer) for 50 umx50 um area

 Related data

• Please click here to see XRD Rocking curve of GaN template
• Please click here to see Dislocation vs Thickness of GaN template
• Please click here to see RMS of GaN template

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