Cu Film on Ta/SiO2/ Silicon Wafer, Cu=400 nm Ta=50nm SiO2=300nm, Si(100) P-type B-doped5x5x0.525mm, 1sp
Cu Film on Ta/SiO2/ Silicon Wafer, Cu=400 nm Ta=50nm SiO2=300nm, Si(100) P-type B-doped5x5x0.525mm, 1sp
Specifications:
- Cu coated SiO2/Si Wafer (5x5 mm size)
- Thickness of polycrystalline Cu <111> film: 400 nm
- Thickness of Ta diffusion barrier: 50 nm
- 5x5x0.5 mm SiO2/ Si wafer (Prime Grade)
- P-type, B doped, <100> orientation, SSP
- Resistivities: 1-20 ohm-cm
- thermal oxide: 300 nm
- Surface Roughness: as grown
- Package: One 1000 class clean room with 100 class plastic bag
- 10 pcs per package for minimum order
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Original: $39.00
-65%$39.00
$13.65Cu Film on Ta/SiO2/ Silicon Wafer, Cu=400 nm Ta=50nm SiO2=300nm, Si(100) P-type B-doped5x5x0.525mm, 1sp
Specifications:
- Cu coated SiO2/Si Wafer (5x5 mm size)
- Thickness of polycrystalline Cu <111> film: 400 nm
- Thickness of Ta diffusion barrier: 50 nm
- 5x5x0.5 mm SiO2/ Si wafer (Prime Grade)
- P-type, B doped, <100> orientation, SSP
- Resistivities: 1-20 ohm-cm
- thermal oxide: 300 nm
- Surface Roughness: as grown
- Package: One 1000 class clean room with 100 class plastic bag
- 10 pcs per package for minimum order
Related Products
![]() |
iO2 |
||||
Thin Films A-Z |
Crystal wafer A-Z |
Plasma Cleaner |
Wafer Containers |
Dicing saw |
Film Coater |
Product Information
Product Information
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Shipping & Returns
Description
Specifications:
- Cu coated SiO2/Si Wafer (5x5 mm size)
- Thickness of polycrystalline Cu <111> film: 400 nm
- Thickness of Ta diffusion barrier: 50 nm
- 5x5x0.5 mm SiO2/ Si wafer (Prime Grade)
- P-type, B doped, <100> orientation, SSP
- Resistivities: 1-20 ohm-cm
- thermal oxide: 300 nm
- Surface Roughness: as grown
- Package: One 1000 class clean room with 100 class plastic bag
- 10 pcs per package for minimum order
Related Products
![]() |
iO2 |
||||
Thin Films A-Z |
Crystal wafer A-Z |
Plasma Cleaner |
Wafer Containers |
Dicing saw |
Film Coater |
