🚚 Free Worldwide Shipping on All Orders!Shop Now
CsI (Tl) Single crystal substrate 10x10x 1.0 mm, 2sp
Substrate Specifications
- Dopant: with Tl concentration 1000-3000 ppm
- Size: 10x10x 1.0mm +/-0.05mm
- Orientation: Radom
- Polish: two sides optical polished
- Pack: Packed in vacuum bag
Properties
| Density | 4.51 g/cm3 |
| Melting Point | 894 oC |
| Hardness | 2 Mohs |
| Hydroscopicity | little |
| Afterglow (after 6ms) | 0.5%-5.0% |
| Decay constant | 1000 ns |
| Expansion coefficient | 54 * 10-6/K |
| Radiation length | 1.7 cm |
| Emission wavelength | 540 nm |
| Light yield | 52 - 56 *103 photons/MeV |
| Refractive Index | 1.79 (Maximum emission wavelength) |
Related Product
|
|
|
|
|
Other Crystal wafer A-Z |
Plasma Cleaner |
Wafer Containers |
Dicing saw |
Film Coater |
$199.00
CsI (Tl) Single crystal substrate 10x10x 1.0 mm, 2sp—
$199.00
CsI (Tl) Single crystal substrate 10x10x 1.0 mm, 2sp
Substrate Specifications
- Dopant: with Tl concentration 1000-3000 ppm
- Size: 10x10x 1.0mm +/-0.05mm
- Orientation: Radom
- Polish: two sides optical polished
- Pack: Packed in vacuum bag
Properties
| Density | 4.51 g/cm3 |
| Melting Point | 894 oC |
| Hardness | 2 Mohs |
| Hydroscopicity | little |
| Afterglow (after 6ms) | 0.5%-5.0% |
| Decay constant | 1000 ns |
| Expansion coefficient | 54 * 10-6/K |
| Radiation length | 1.7 cm |
| Emission wavelength | 540 nm |
| Light yield | 52 - 56 *103 photons/MeV |
| Refractive Index | 1.79 (Maximum emission wavelength) |
Related Product
|
|
|
|
|
Other Crystal wafer A-Z |
Plasma Cleaner |
Wafer Containers |
Dicing saw |
Film Coater |
Product Information
Product Information
Shipping & Returns
Shipping & Returns
Description
Substrate Specifications
- Dopant: with Tl concentration 1000-3000 ppm
- Size: 10x10x 1.0mm +/-0.05mm
- Orientation: Radom
- Polish: two sides optical polished
- Pack: Packed in vacuum bag
Properties
| Density | 4.51 g/cm3 |
| Melting Point | 894 oC |
| Hardness | 2 Mohs |
| Hydroscopicity | little |
| Afterglow (after 6ms) | 0.5%-5.0% |
| Decay constant | 1000 ns |
| Expansion coefficient | 54 * 10-6/K |
| Radiation length | 1.7 cm |
| Emission wavelength | 540 nm |
| Light yield | 52 - 56 *103 photons/MeV |
| Refractive Index | 1.79 (Maximum emission wavelength) |
Related Product
|
|
|
|
|
Other Crystal wafer A-Z |
Plasma Cleaner |
Wafer Containers |
Dicing saw |
Film Coater |
