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CsI (Tl) Single crystal substrate 10x10x 1.0 mm, 1sp - CsITl101010S1
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CsI (Tl) Single crystal substrate 10x10x 1.0 mm, 1sp - CsITl101010S1

CsI (Tl) Single crystal substrate 10x10x 1.0 mm, 1sp - CsITl101010S1

Substrate Specifications

  • Dopant:           with Tl concentration 1000-3000 ppm
  • Size:               10x10x 1.0mm  +/-0.05mm
  • Orientation:      Radom
  • Polish:             One side optical polished
  • Pack:              Packed in vacuum bag

 Properties

Density 4.51 g/cm3
Melting Point  894 o
Hardness  2 Mohs
Hydroscopicity little
Afterglow (after 6ms)   0.5%-5.0%
Decay constant    1000 ns
Expansion coefficient          54 * 10-6/K
Radiation length  1.7 cm
Emission wavelength  540 nm
Light yield  52 - 56 *103 photons/MeV
Refractive Index 1.79 (Maximum emission wavelength)   





















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$68.25

Original: $195.00

-65%
CsI (Tl) Single crystal substrate 10x10x 1.0 mm, 1sp - CsITl101010S1

$195.00

$68.25

CsI (Tl) Single crystal substrate 10x10x 1.0 mm, 1sp - CsITl101010S1

Substrate Specifications

  • Dopant:           with Tl concentration 1000-3000 ppm
  • Size:               10x10x 1.0mm  +/-0.05mm
  • Orientation:      Radom
  • Polish:             One side optical polished
  • Pack:              Packed in vacuum bag

 Properties

Density 4.51 g/cm3
Melting Point  894 o
Hardness  2 Mohs
Hydroscopicity little
Afterglow (after 6ms)   0.5%-5.0%
Decay constant    1000 ns
Expansion coefficient          54 * 10-6/K
Radiation length  1.7 cm
Emission wavelength  540 nm
Light yield  52 - 56 *103 photons/MeV
Refractive Index 1.79 (Maximum emission wavelength)   





















Related Product

Other Crystal wafer A-Z

Plasma Cleaner

 Wafer Containers

Dicing saw

Film Coater


Product Information

Shipping & Returns

Description

Substrate Specifications

  • Dopant:           with Tl concentration 1000-3000 ppm
  • Size:               10x10x 1.0mm  +/-0.05mm
  • Orientation:      Radom
  • Polish:             One side optical polished
  • Pack:              Packed in vacuum bag

 Properties

Density 4.51 g/cm3
Melting Point  894 o
Hardness  2 Mohs
Hydroscopicity little
Afterglow (after 6ms)   0.5%-5.0%
Decay constant    1000 ns
Expansion coefficient          54 * 10-6/K
Radiation length  1.7 cm
Emission wavelength  540 nm
Light yield  52 - 56 *103 photons/MeV
Refractive Index 1.79 (Maximum emission wavelength)   





















Related Product

Other Crystal wafer A-Z

Plasma Cleaner

 Wafer Containers

Dicing saw

Film Coater


CsI (Tl) Single crystal substrate 10x10x 1.0 mm, 1sp - CsITl101010S1 | MTI Online Store