Aluminum Film on Silicon Wafer , 3 microns / 4" -- Al-Si-100-3um ,Si(100) P-type B-doped R:1-20 ohm.cm

Aluminum Metallic Film

• Film-coated by E-beam evaporation under vacuum below 10-6 torr
• evaporation rate: 0.2 nanometer per second
• Aluminum Thickness: 3 microns
• Film Resistivity: 2.65  micro-ohm-cm
• Film Crystallinity:  Weak (111) - oriented polycrystals
• Roughness, RMS:  4.87 nm and  < 10 nm

Silicon Wafer Specifications:

• Conductive type:        Si   P- type, B-doped 
• Resistivity:                  1- 20 ohm-cm
• Size:                          4" diameter +/- 0.5 mm  x 0.525 +/- 0.025 mm th
• Orientation:                (100) +/- 0.5^o
• Polish:                        One  side  polished
• Surface roughness:     Prime
• Packing:                      Vacuum packed on a 4" single wafer carrier
  
• Optional:  you may need tool below to handle the wafer ( click picture to order )

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