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12" Poromeric Polishing Pad (PSA) for Final Polishing - PP12PSA
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12" Poromeric Polishing Pad (PSA) for Final Polishing - PP12PSA

12" Poromeric Polishing Pad (PSA) for Final Polishing - PP12PSA

Poromeric pad is made of napped none-woven materials with uniform pore structure and wall strength. The standard sizes of poromeric polishing pads are 8", 10" ,12" and 15". 

Specification 

Size
  • 12"
Thickness
  • 1.65mm 
Tear Strength Machine Direction: 57N
Transverse Direction: 56N
Elongation  Machine Direction: 53%
Transverse Direction: 86%
Tensile Strength  Machine Direction: 642 N/3cm (force applied within a 3 cm range)
Transverse Direction: 511 N/3cm (force applied within a 3 cm range)
Application
  • Final polishing of LiNbO3 and Sapphire wafers
  • Final polishing in CMP for semiconductors and oxide crystals.
  • EPI polishing for all single crystal substrates.

 

 

$10.13

Original: $28.95

-65%
12" Poromeric Polishing Pad (PSA) for Final Polishing - PP12PSA—

$28.95

$10.13

12" Poromeric Polishing Pad (PSA) for Final Polishing - PP12PSA

Poromeric pad is made of napped none-woven materials with uniform pore structure and wall strength. The standard sizes of poromeric polishing pads are 8", 10" ,12" and 15". 

Specification 

Size
  • 12"
Thickness
  • 1.65mm 
Tear Strength Machine Direction: 57N
Transverse Direction: 56N
Elongation  Machine Direction: 53%
Transverse Direction: 86%
Tensile Strength  Machine Direction: 642 N/3cm (force applied within a 3 cm range)
Transverse Direction: 511 N/3cm (force applied within a 3 cm range)
Application
  • Final polishing of LiNbO3 and Sapphire wafers
  • Final polishing in CMP for semiconductors and oxide crystals.
  • EPI polishing for all single crystal substrates.

 

 

Product Information

Shipping & Returns

Description

Poromeric pad is made of napped none-woven materials with uniform pore structure and wall strength. The standard sizes of poromeric polishing pads are 8", 10" ,12" and 15". 

Specification 

Size
  • 12"
Thickness
  • 1.65mm 
Tear Strength Machine Direction: 57N
Transverse Direction: 56N
Elongation  Machine Direction: 53%
Transverse Direction: 86%
Tensile Strength  Machine Direction: 642 N/3cm (force applied within a 3 cm range)
Transverse Direction: 511 N/3cm (force applied within a 3 cm range)
Application
  • Final polishing of LiNbO3 and Sapphire wafers
  • Final polishing in CMP for semiconductors and oxide crystals.
  • EPI polishing for all single crystal substrates.

 

 

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