
Ga2O3-Beta Single Crystal Substrate, <-201> ori, 5x5x0.6mm, 1SP
Substrate Specifications:
- Chmistry: ß-Ga2O3 ( Made in China)
- Structure: Monoclinic
- Lattice Constant: a=12.23A, b=3.04A, c=5.80A, ß=103.7°
- Orientation: <-201> +/-0.7° ( Please pay attention a, b, c axis defination above )
- Type/Dopant: N type/Sn-doped
- Size: 5x5 x 0.6 mm
- Polish: one side polished
- Surface roughness: < 5A
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Original: $899.00
-65%$899.00
$314.65Ga2O3-Beta Single Crystal Substrate, <-201> ori, 5x5x0.6mm, 1SP
Substrate Specifications:
- Chmistry: ß-Ga2O3 ( Made in China)
- Structure: Monoclinic
- Lattice Constant: a=12.23A, b=3.04A, c=5.80A, ß=103.7°
- Orientation: <-201> +/-0.7° ( Please pay attention a, b, c axis defination above )
- Type/Dopant: N type/Sn-doped
- Size: 5x5 x 0.6 mm
- Polish: one side polished
- Surface roughness: < 5A
Related Products
![]() |
|||||
Thin Films A-Z |
Crystal wafer A-Z |
Plasma Cleaner |
Wafer Containers |
Dicing saw |
Film Coater |
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Description
Substrate Specifications:
- Chmistry: ß-Ga2O3 ( Made in China)
- Structure: Monoclinic
- Lattice Constant: a=12.23A, b=3.04A, c=5.80A, ß=103.7°
- Orientation: <-201> +/-0.7° ( Please pay attention a, b, c axis defination above )
- Type/Dopant: N type/Sn-doped
- Size: 5x5 x 0.6 mm
- Polish: one side polished
- Surface roughness: < 5A
Related Products
![]() |
|||||
Thin Films A-Z |
Crystal wafer A-Z |
Plasma Cleaner |
Wafer Containers |
Dicing saw |
Film Coater |





