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CdTe doped with Zn, P type , (CZT ) (111) 10x10x 1.0mm,2sp
- Crystal: Zn doped CdTe, also called CdZnTe ( Cd1-x Zn x Te, x=0.04)
- Orientation: <111> +/-0.5 o
- Size: 10x10x 1.0 mm
- Polished: Two sides polished
- Resistivity: (0.5-4.0) x 10 4 oh-cm ( P type )
- Carrier concentration: ~ 1015/cm 3
- Surface roughness: < 15A
- Package: 1000 class clean plastic bag
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CZT crystal is grown by special Bridgman technique up to 2?Diameter. Compared with CdTe, it has a larger band gap and excellent IR transmission. It is widely used as X-ray and gama-ray detectors, and substrate for epitaxial film.
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$899.00
CdTe doped with Zn, P type , (CZT ) (111) 10x10x 1.0mm,2sp—
$899.00
CdTe doped with Zn, P type , (CZT ) (111) 10x10x 1.0mm,2sp
- Crystal: Zn doped CdTe, also called CdZnTe ( Cd1-x Zn x Te, x=0.04)
- Orientation: <111> +/-0.5 o
- Size: 10x10x 1.0 mm
- Polished: Two sides polished
- Resistivity: (0.5-4.0) x 10 4 oh-cm ( P type )
- Carrier concentration: ~ 1015/cm 3
- Surface roughness: < 15A
- Package: 1000 class clean plastic bag
|
CZT crystal is grown by special Bridgman technique up to 2?Diameter. Compared with CdTe, it has a larger band gap and excellent IR transmission. It is widely used as X-ray and gama-ray detectors, and substrate for epitaxial film.
|
|
Product Information
Product Information
Shipping & Returns
Shipping & Returns
Description
- Crystal: Zn doped CdTe, also called CdZnTe ( Cd1-x Zn x Te, x=0.04)
- Orientation: <111> +/-0.5 o
- Size: 10x10x 1.0 mm
- Polished: Two sides polished
- Resistivity: (0.5-4.0) x 10 4 oh-cm ( P type )
- Carrier concentration: ~ 1015/cm 3
- Surface roughness: < 15A
- Package: 1000 class clean plastic bag
|
CZT crystal is grown by special Bridgman technique up to 2?Diameter. Compared with CdTe, it has a larger band gap and excellent IR transmission. It is widely used as X-ray and gama-ray detectors, and substrate for epitaxial film.
|
|
