100 nm Silicon Nitride Film (PE-CVD) on Si(100)P-type ,B-doped 100 mm dia .x0.525mm thick, 1sp,R:0.001-0.005 ohm.cm - FmSi3N4onSiBa100D0525C1FT100

Silicon Nitride Film

• Si3N4 Film coated by low stress PE-CVD method
  
• Si3N4 Thickness:   100nm  +/- 8%
• Si3N4 covers front polished side of Silicon wafer ONLY
  
• Refractive Index of Si3N3: 1.98 +/-0.05 @ 632.8nm

Silicon Wafer Specifications:

• Conductive type:        Si   P- type, B-doped
  
• Resistivity:                 0.001-0.005 ohm-cm
• Size:                          4" diameter +/- 0.5 mm x  0.525 +/- 0.025 mm th
• Orientation:                (100) +/- 0.5^o
• Polish:                        One  side  polished
• Surface roughness:     Prime
• Packing:                      Vacuum packed on a 4" single wafer carrier box
  

• Optional:  you may need tool below to handle the wafer ( click picture to order )

  Diamond Scriber for Cutting Single Crystal Substrate - DS-01	Micro-Fiber & Dust Free Wiper, 4"x4", 100 pcs/bag - Wiper-yx-2001	Vacuum Pen SMT-150C (NEW) - EQ-SMT-150C	Single Wafer Containers

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