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Si Wafer (111) 2" dia x 0.28 mm, 1SP, P type, B doped, R:0.1-10 ohm-cm - SIBc50D028C1R01
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Si Wafer (111) 2" dia x 0.28 mm, 1SP, P type, B doped, R:0.1-10 ohm-cm - SIBc50D028C1R01

Si Wafer (111) 2" dia x 0.28 mm, 1SP, P type, B doped, R:0.1-10 ohm-cm - SIBc50D028C1R01

  • Single crystal Silicon
  • Conductive type: P type/ Boron dopedĀ 
  • Resistivity: 0.1 - 10 ohm-cm (If you would like to measure the resistivity accurately,Ā 
    please order ourĀ Portable 4 Probe Resistivity Testing Instrument
  • Size: 50.8Ā diameter +/- 0.5 mm x 0.28 +/- 0.025 mm
  • Orientation: (111) +/- 1o
  • Polish: one side polished
  • Surface roughness: < 5A
$16.08

Original: $45.95

-65%
Si Wafer (111) 2" dia x 0.28 mm, 1SP, P type, B doped, R:0.1-10 ohm-cm - SIBc50D028C1R01—

$45.95

$16.08

Si Wafer (111) 2" dia x 0.28 mm, 1SP, P type, B doped, R:0.1-10 ohm-cm - SIBc50D028C1R01

  • Single crystal Silicon
  • Conductive type: P type/ Boron dopedĀ 
  • Resistivity: 0.1 - 10 ohm-cm (If you would like to measure the resistivity accurately,Ā 
    please order ourĀ Portable 4 Probe Resistivity Testing Instrument
  • Size: 50.8Ā diameter +/- 0.5 mm x 0.28 +/- 0.025 mm
  • Orientation: (111) +/- 1o
  • Polish: one side polished
  • Surface roughness: < 5A

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Description

  • Single crystal Silicon
  • Conductive type: P type/ Boron dopedĀ 
  • Resistivity: 0.1 - 10 ohm-cm (If you would like to measure the resistivity accurately,Ā 
    please order ourĀ Portable 4 Probe Resistivity Testing Instrument
  • Size: 50.8Ā diameter +/- 0.5 mm x 0.28 +/- 0.025 mm
  • Orientation: (111) +/- 1o
  • Polish: one side polished
  • Surface roughness: < 5A