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KTaO3 Single Crystal Substrate (100) 10x5x1.0mm 1sp, KTOa100510S1US5
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KTaO3 Single Crystal Substrate (100) 10x5x1.0mm 1sp, KTOa100510S1US5

KTaO3 Single Crystal Substrate (100) 10x5x1.0mm 1sp, KTOa100510S1US5

  • Single crystal KTaO3
  • Orientation: (100) +/0.5o Edge // <001> & <010>
  • Size: 10 mm x 5mm x 1.0mm
  • Polish: one side polish
  • Surface roughness: < 5A

Typical Properties

 

Molecular weight: 268.04

Crystal Structure: Cubic, Perovskite, a = 3.989 Angstroms

Melting point: Does not melt congruently.

Density: 7.015 g / cc

Thermal conductivity: 10-20 w/m.k at 300k

Refractive index: 2.14

Sellenmeyer equation: ηo2 -1 =3.591λ2 / (λ2 -0.193) 2 )

(λ in µm, from 0.4 -1.06 µm )

Crystal growth method: Top seed flux growth


Related Products:

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MgO

YSZ

SrLaAlO4

Dicing Saw

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$529.00
KTaO3 Single Crystal Substrate (100) 10x5x1.0mm 1sp, KTOa100510S1US5
$529.00

KTaO3 Single Crystal Substrate (100) 10x5x1.0mm 1sp, KTOa100510S1US5

  • Single crystal KTaO3
  • Orientation: (100) +/0.5o Edge // <001> & <010>
  • Size: 10 mm x 5mm x 1.0mm
  • Polish: one side polish
  • Surface roughness: < 5A

Typical Properties

 

Molecular weight: 268.04

Crystal Structure: Cubic, Perovskite, a = 3.989 Angstroms

Melting point: Does not melt congruently.

Density: 7.015 g / cc

Thermal conductivity: 10-20 w/m.k at 300k

Refractive index: 2.14

Sellenmeyer equation: ηo2 -1 =3.591λ2 / (λ2 -0.193) 2 )

(λ in µm, from 0.4 -1.06 µm )

Crystal growth method: Top seed flux growth


Related Products:

LaAlO3

MgO

YSZ

SrLaAlO4

Dicing Saw

RTP Furnace

Wafer Containers

Film Coaters


Product Information

Shipping & Returns

Description

  • Single crystal KTaO3
  • Orientation: (100) +/0.5o Edge // <001> & <010>
  • Size: 10 mm x 5mm x 1.0mm
  • Polish: one side polish
  • Surface roughness: < 5A

Typical Properties

 

Molecular weight: 268.04

Crystal Structure: Cubic, Perovskite, a = 3.989 Angstroms

Melting point: Does not melt congruently.

Density: 7.015 g / cc

Thermal conductivity: 10-20 w/m.k at 300k

Refractive index: 2.14

Sellenmeyer equation: ηo2 -1 =3.591λ2 / (λ2 -0.193) 2 )

(λ in µm, from 0.4 -1.06 µm )

Crystal growth method: Top seed flux growth


Related Products:

LaAlO3

MgO

YSZ

SrLaAlO4

Dicing Saw

RTP Furnace

Wafer Containers

Film Coaters