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InAs (411), S doped ellipse shape wafer (area >30mm dia) 1sp - IAS411ellipes
- Growth method LEC
- Orientation (411) ± 0.5 Deg
- Orientation Flat N/A
- Doping S doped
- Conductivity type N type
- Carrier Concentration <7E17 ~ 1E18 / cm3
- Mobility >10000 cm2/V.S
- EPD <2E4 / cm 2
- Standard thickness 500 ± 20 mm
- Size ellipse shape, (area > 30mm diameter)
- Polish one-side
Related Product
Other InAs
|
InSb
|
InP
|
GaAs |
GaSb |
Wafer Box
|
Film Coater
|
RTP Furnaces
|
$209.65
Original: $599.00
-65%InAs (411), S doped ellipse shape wafer (area >30mm dia) 1sp - IAS411ellipes—
$599.00
$209.65InAs (411), S doped ellipse shape wafer (area >30mm dia) 1sp - IAS411ellipes
- Growth method LEC
- Orientation (411) ± 0.5 Deg
- Orientation Flat N/A
- Doping S doped
- Conductivity type N type
- Carrier Concentration <7E17 ~ 1E18 / cm3
- Mobility >10000 cm2/V.S
- EPD <2E4 / cm 2
- Standard thickness 500 ± 20 mm
- Size ellipse shape, (area > 30mm diameter)
- Polish one-side
Related Product
| Other InAs
|
InSb
|
InP
|
GaAs |
GaSb |
Wafer Box
|
Film Coater
|
RTP Furnaces
|
Product Information
Product Information
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Description
- Growth method LEC
- Orientation (411) ± 0.5 Deg
- Orientation Flat N/A
- Doping S doped
- Conductivity type N type
- Carrier Concentration <7E17 ~ 1E18 / cm3
- Mobility >10000 cm2/V.S
- EPD <2E4 / cm 2
- Standard thickness 500 ± 20 mm
- Size ellipse shape, (area > 30mm diameter)
- Polish one-side
Related Product
| Other InAs
|
InSb
|
InP
|
GaAs |
GaSb |
Wafer Box
|
Film Coater
|
RTP Furnaces
|
